Crystalline gadolinium oxide: A promising high-k candidate for future CMOS generations

ECS Transactions

Volumn 33, Issue 3, 2010, Pages 25-29

  Endres, R ^a   Gottlob, H D B ^b   Schmidt, M ^b   Schwendt, D ^c   Osten, H J ^c   Schwalke, U ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b AMO GMBH   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRIC FIELD EFFECTS; GATE DIELECTRICS; HIGH-K DIELECTRIC; MOSFET DEVICES; NANOCRYSTALLINE MATERIALS; REFRACTORY METAL COMPOUNDS; TITANIUM NITRIDE;

FUNCTIONAL METALS; GADOLINIUM OXIDE; GATE ELECTRODES; GATE-LAST PROCESS; HIGH- K; HIGH- K GATE DIELECTRICS; MOSFETS; P AND N TYPES;

GADOLINIUM COMPOUNDS;

EID: 79952654651     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3481588     Document Type: Conference Paper

References (3)

1. 5 thin films for high-K application, Appl. Phys. Lett. 90, 113508-1/3 (2007).
2. rd International Conference on Signals, Circuits and Systems (SCS'09), Djerba, Tunesia, 2009.
3. R. Endres, Y. Stefanov and U. Schwalke, Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results, International Conference on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan, 2006