Electrolyte-gated, high mobility inorganic oxide transistors from printed metal halides

ACS Applied Materials and Interfaces

Volumn 5, Issue 22, 2013, Pages 11498-11502

  Garlapati, Suresh Kumar ^a,b   Mishra, Nilesha ^a   Dehm, Simone ^a   Hahn, Ramona ^a   Kruk, Robert ^a   Hahn, Horst ^a,b,c   Dasgupta, Subho ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

electrolyte gating; field effect mobility; field effect transistors (FETs); oxide electronics; oxide semiconductor; solution processed

Indexed keywords

ELECTROLYTE-GATING; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; OXIDE ELECTRONICS; OXIDE SEMICONDUCTOR; SOLUTION-PROCESSED;

ELECTROLYTES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS;

TRANSISTORS;

EID: 84889240006     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am403131j     Document Type: Article

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