Side-gate graphene field-effect transistors with high transconductance

Applied Physics Letters

Volumn 101, Issue 9, 2012, Pages

  Hahnlein B ^a   Handel B ^a   Pezoldt, J ^a   Topfer H ^a   Granzner, R ^a   Schwierz, F ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; ELECTROSTATIC GATES; GATE-CHANNEL CAPACITANCE; GRAPHENE TRANSISTORS; MOSFETS;

CAPACITANCE; ELECTROSTATIC DEVICES; ELECTROSTATICS; EPITAXIAL GROWTH; GRAPHENE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 84865852822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748112     Document Type: Article

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