Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

Thin Solid Films

Volumn 549, Issue , 2013, Pages 165-171

  Lim, Sin Yee ^a   Brahma, Sanjaya ^a   Liu, Chuan Pu ^a   Wang, Ruey Chi ^b   Huang, Jow Lay ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

Chemical vapor deposition; Electrical properties; Indium doping; Photoluminescence; ZnO nanowires

Indexed keywords

CHEMICAL VAPOR DEPOSITIONS (CVD); DOPING CONCENTRATION; INDIUM CONCENTRATION; INDIUM DOPING; INTENSITY ENHANCEMENT; PHOTOLUMINESCENCE SPECTRUM; ULTRAVIOLET EMISSION; ZNO NANOWIRES;

CHEMICAL VAPOR DEPOSITION; INDIUM; NANOWIRES; PHOTOLUMINESCENCE; VAPORS; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84888642662     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.09.001     Document Type: Conference Paper

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