Conductivity enhancement by slight indium doping in ZnO nanowires for optoelectronic applications

Journal of Physics D: Applied Physics

Volumn 42, Issue 16, 2009, Pages

  Ahmad, Mashkoor ^a   Zhao, Jiong ^a   Iqbal, Javed ^a   Miao, Wei ^a   Xie, Lin ^a   Mo, Rigen ^a   Zhu, Jing ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BLUE SHIFT; CONDUCTIVITY ENHANCEMENT; DOPED SAMPLE; DOPED ZNO; ELECTRICAL RESISTIVITY; ELECTRICAL/OPTICAL PROPERTIES; GROWTH DIRECTIONS; INDIUM DOPING; OPTOELECTRONIC APPLICATIONS; OXIDATION STATE; PEAK SHIFT; PHOTOLUMINESCENCE SPECTRUM; SINGLE-CRYSTALLINE; UV REGION; VALENCE STATE; ZNO; ZNO NANOWIRES; ZNO NWS;

DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; HOLOGRAPHIC INTERFEROMETRY; INDIUM; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; SULFUR COMPOUNDS; THERMAL EVAPORATION; X RAY SPECTROSCOPY; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 70349160450     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/16/165406     Document Type: Article

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