N-type field-effect transistors using multiple Mg-doped ZnO nanorods

IEEE Transactions on Nanotechnology

Volumn 6, Issue 3, 2007, Pages 390-394

  Ju, Sanghyun ^b   Li, Jianye ^c   Pimparkar, Ninad ^b   Alam, Muhammad A ^a,b   Chang, R P H ^c   Janes, David B ^a,b  

^a IEEE   (United States)

^b PURDUE UNIVERSITY   (United States)

^c Northwestern University   (United States)

Author keywords

Multiple; Nanorod; Transistor; ZnO

Indexed keywords

GATE VOLTAGES; NANOROD GROWTH; SUBTHRESHOLD SLOPES;

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); MAGNESIUM; NANORODS; THRESHOLD VOLTAGE; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 34248666422     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.893148     Document Type: Article

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