Incomplete ionization of aluminum in silicon and its effect on accurate determination of doping profiles

Journal of Applied Physics

Volumn 114, Issue 20, 2013, Pages

  Rauer, Michael ^a   Rüdiger, Marc ^a   Schmiga, Christian ^a   Strutzberg, Hartmuth ^b   Bähr, Mario ^b   Glatthaar, Markus ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b SolarTestLab Laboratory   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONCENTRATION; ALUMINUM ACCEPTORS; BACK SURFACE FIELDS; ELECTRICALLY ACTIVES; ELECTROCHEMICAL CAPACITANCE VOLTAGE; INCOMPLETE IONIZATION; PRECISE DETERMINATIONS; QUANTITATIVE MODELING;

IONIZATION; SECONDARY ION MASS SPECTROMETRY; SILICON;

ALUMINUM;

EID: 84888626611     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4833242     Document Type: Article

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