Record large-area p-type CZ production cell efficiency of 19.3% based on LDSE technology

IEEE Journal of Photovoltaics

Volumn 1, Issue 1, 2011, Pages 43-48

  Hallam, B ^a   Wenham, S ^a   Sugianto, A ^a   Mai, L ^a   Chong, C ^a   Edwards, M ^a   Jordan, D ^a   Fath, P ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b CENTROTHERM PHOTOVOLTAICS AG   (Germany)

Author keywords

Diffusion process; laser applications; photovoltaic cells; semiconductor device manufacture; silicon devices

Indexed keywords

BACK-SURFACE FIELD; COMMERCIAL GRADE; CZOCHRALSKI SILICON; DEFECT FORMATION; DIFFUSION PROCESS; LASER CHEMICAL PROCESSING; LASER DOPING; LASER-INDUCED DEFECT; P-TYPE; PRODUCTION CELLS; PRODUCTION EQUIPMENTS; SELECTIVE EMITTERS; SELF-ALIGNING; SILICON DEVICES; UNIVERSITY OF NEW SOUTH WALES;

CHEMICAL INDUSTRY; EFFICIENCY; LASER APPLICATIONS; PATENTS AND INVENTIONS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON NITRIDE; SILICON WAFERS; TECHNOLOGY;

INNOVATION;

EID: 84865182465     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2164392     Document Type: Article

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