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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 5, 2010, Pages 1249-1251

Effectively surface-passivated aluminium-doped pR emitters for n-type silicon solar cells

(4) Rauer, Michael a Schmiga, Christian a Hermle, Martin a Glunz, Stefan W a

a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING CONDITIONS; ALUMINIUM OXIDE; AMORPHOUS SILICON (A-SI); ATOMIC LAYER DEPOSITED; EMITTER SATURATION CURRENT DENSITY; N TYPE SILICON; PASSIVATION LAYER; SCREEN-PRINTED; SURFACE PASSIVATION;

ALUMINUM; PASSIVATION; SILICON SOLAR CELLS; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 77952712933 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200925507 Document Type: Conference Paper

Times cited : (14)

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