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Volumn , Issue , 2011, Pages 002957-002962

Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION MODEL; DOPANT PROFILE; EMITTER DIFFUSION; INDUSTRIAL FABRICATION; PHOSPHOSILICATE GLASS; PRE-DEPOSITION; PREDICTION CAPABILITY; PREDICTIVE POWER; PROFILE MEASUREMENT; SELECTIVE EMITTERS; SI SURFACES;

EID: 84861082237     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186566     Document Type: Conference Paper
Times cited : (21)

References (13)
  • 1
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    • (1970) Z. Angew. Physik , vol.30 , pp. 272-275
    • Dathe, J.1    Müller, W.2    Grasser, L.3
  • 3
    • 0022075654 scopus 로고
    • Evaluation of the Phosphorus Concentration and Its Effect on Viscous Flow and Reflow in Phosphosilicate Glass
    • R. A. Levy, S. M. Vincent, and T. E. McGahan, "Evaluation of the Phosphorus Concentration and Its Effect on Viscous Flow and Reflow in Phosphosilicate Glass," J. Electrochem. Soc. 132, 1985, pp. 1472-1480.
    • (1985) J. Electrochem. Soc. , vol.132 , pp. 1472-1480
    • Levy, R.A.1    Vincent, S.M.2    McGahan, T.E.3
  • 5
    • 0001813439 scopus 로고    scopus 로고
    • Dopant and Carrier Concentration in Si in Equilibrium with Monoclinic SiP Precipitates
    • S. Solmi, A. Parisini, R. Angelucci, and A. Armigliato, "Dopant and Carrier Concentration in Si in Equilibrium with Monoclinic SiP Precipitates," Phys. Rev. B 53, 1996, pp. 7836-7841.
    • (1996) Phys. Rev. B , vol.53 , pp. 7836-7841
    • Solmi, S.1    Parisini, A.2    Angelucci, R.3    Armigliato, A.4
  • 6
    • 84861089877 scopus 로고    scopus 로고
    • Private communications with Furtwangen (Germany)
    • Private communications with Thomas Wolff, Ingenieurbüro WEP, Furtwangen (Germany).
    • Ingenieurbüro WEP
    • Wolff, T.1
  • 7
    • 0026917539 scopus 로고
    • A Quantitative Model for the Coupled Diffusion of Phosphorus and Point Defects in Silicon
    • S. T. Dunham, "A Quantitative Model for the Coupled Diffusion of Phosphorus and Point Defects in Silicon," J. Electrochem. Soc. 139, 1992, pp. 2628-2636.
    • (1992) J. Electrochem. Soc. , vol.139 , pp. 2628-2636
    • Dunham, S.T.1
  • 8
    • 33846283038 scopus 로고    scopus 로고
    • Self- and Foreign-Atom Diffusion in Semiconductor Isotope Heterostructures.II. Experimental Results for Silicon
    • H. Bracht, "Self- and Foreign-Atom Diffusion in Semiconductor Isotope Heterostructures.II. Experimental Results for Silicon," Phys. Rev. B 75, 2007, pp. 035211 (1-15).
    • (2007) Phys. Rev. B , vol.75 , Issue.1-15 , pp. 035211
    • Bracht, H.1
  • 9
    • 0019900413 scopus 로고
    • Phosphorus Diffusion into Silicon from Chemically Vapour-Deposited Phosphosilicate Glass
    • G. F. Cerofolini, M. L. Polignano, and P. Picco, "Phosphorus Diffusion into Silicon from Chemically Vapour-Deposited Phosphosilicate Glass," Thin Solid Films 87, 1982, pp. 373-378.
    • (1982) Thin Solid Films , vol.87 , pp. 373-378
    • Cerofolini, G.F.1    Polignano, M.L.2    Picco, P.3
  • 11
    • 47549091151 scopus 로고    scopus 로고
    • Charge Carrier Induced Lattice Strain and Stress Effects on As
    • C. Ahn and S. T. Dunham, "Charge Carrier Induced Lattice Strain and Stress Effects on As," Appl. Phys. Lett. 93, 2008, pp. 022112 (1-3).
    • (2008) Appl. Phys. Lett. , vol.93 , Issue.1-3 , pp. 022112
    • Ahn, C.1    Dunham, S.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.