High performance InAlN/GaN HEMTs on sic substrate

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

Volumn , Issue , 2010, Pages

  Wang, Han ^a   Chung, Jinwook W ^a   Gao, Xiang ^b   Guo, Shiping ^b   Palacios, Tomas ^a  

^a USA   (United States)

^b IQE INC   (United States)

Author keywords

Compound semiconductor; High electron mobility transistors(HEMT); InAlN GaN

Indexed keywords

COMPOUND SEMICONDUCTORS; FABRICATED DEVICE; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); INALN/GAN; INALN/GAN HEMTS; MAXIMUM DRAIN CURRENT; SURFACE PASSIVATION;

ATOMIC LAYER DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887331048     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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