Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

Applied Physics Letters

Volumn 103, Issue 15, 2013, Pages

  Koleśnik Gray, Maria M ^a   Lutz, Tarek ^a   Collins, Gillian ^a,b   Biswas, Subhajit ^a,b   Holmes, Justin D ^a,b   Krstić, Vojislav ^a,c  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION CHANNEL; CONTACT ELECTRODES; CONTACT RESISTIVITIES; FERMI LEVEL PINNING; GERMANIUM NANOWIRES; PINNING PARAMETERS; QUASI-ONE-DIMENSIONAL; SCHOTTKY BARRIER HEIGHTS;

ELECTRIC PROPERTIES; GERMANIUM; NANOWIRES;

FERMI LEVEL;

EID: 84886880758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4821996     Document Type: Article

References (26)

1. C. M. Lieber, MRS Bull. 36, 1052 (2011). 10.1557/mrs.2011.269
2. P. Yang, R. Yan, and M. Fardy, Nano Lett. 10, 1529 (2010). 10.1021/nl100665r
3. S. Ju, A. Facchetti, X. Xuan, J. Liu, F. Ishikawa, P. D. Ye, C. Zhou, T. J. Marks, and D. B. Janes, Nature Nanotechnol. 2, 378 (2007). 10.1038/nnano.2007.151
4. J. Xiang, W. Lu, Y. Hu, H. Yan, and C. M. Lieber, Nature 441, 489 (2006). 10.1038/nature04796
5. X. Wu, J. S. Kulkarni, G. Collins, N. Petkov, D. Almecija, J. J. Boland, D. Erts, and J. D. Holmes, Chem. Mater. 20, 5954 (2008). 10.1021/cm801104s
6. F. Leonard and A. A. Talin, Nat. Nanotechnol. 6, 773 (2011). 10.1038/nnano.2011.196
7. V. Chaudhry, E. Ramamurthi, E. Fong, and M. S. Islam, Nano Lett. 7, 1536 (2007). 10.1021/nl070325e
8. E. Stern, G. Cheng, M. P. Young, and M. A. Reed, Appl. Phys. Lett. 88, 053106 (2006). 10.1063/1.2163454
9. J. Salfi, U. Philipose, C. F. de Sousa, S. Aouba, H. E. Ruda, Appl. Phys. Lett. 89, 261112 (2006). 10.1063/1.2424653
10. S. E. Mohney, Y. Wang, M. A. Cabassi, K. K. Lew, S. Dey, J. M. Redwing, and T. S. Mayer, Solid State Electron. 49, 227 (2005). 10.1016/j.sse.2004.08.006
11. International Technology Roadmap for Semiconductors: Emerging Research Materials (ITRS, 2011).
12. A. Cathignol, B. Cheng, D. Chanemougame, A. R. Brown, K. Rocherau, G. Ghibaudo, and A. Asenov, IEEE Electron. Devices Lett. 29, 609 (2008). 10.1109/LED.2008.922978
13. F. Leonard and A. A. Talin, Phys. Rev. Lett. 97, 026804 (2006). 10.1103/PhysRevLett.97.026804
14. C. Malagu, V. Guidi, M. C. Carotta, and G. Martinelli, Appl. Phys. Lett. 91, 808 (2002).
15. H. Statz, G. A. deMars, L. Davis, and A. Adams, Jr., Phys. Rev. 101, 1272 (1956). 10.1103/PhysRev.101.1272
16. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007). 10.1063/1.2789701
17. L. T. Ngo, D. Almecija, J. E. Sader, B. Daly, N. Petkov, J. D. Holmes, D. Erts, and J. J. Boland, Nano Lett. 6, 2964 (2006). 10.1021/nl0619397
18. G. Collins, M. M. Koleśnik, V. Krstić, and J. D. Holmes, Chem. Mater. 22, 5235 (2010). 10.1021/cm1012137
19. See supplementary material at http://dx.doi.org/10.1063/1.4821996 E-APPLAB-103-006339 for further details on experimental procedures, analysis, and models used.
20. D. Josell, S. H. Brongersma, and Z. Tokei, Annu. Rev. Mater. Res. 39, 231 (2009). 10.1146/annurev-matsci-082908-145415
21. CRC Handbook of Chemistry and Physics, 85th ed. (CRC Press, Boca Raton, FL, 2004-2005).
22. H. H. Berger, Solid State Electron. 15, 145 (1972). 10.1016/0038-1101(72) 90048-2
23. M. M. Koleśnik, S. Hansel, T. Lutz, N. Kinahan, M. Boese, and V. Krstić, Small 7, 2873 (2011). 10.1002/smll.201100600
24. A. Y. C. Yu, Solid State Electron. 13, 239 (1970). 10.1016/0038-1101(70) 90056-0
25. Z. Zhang, K. Yao, Y. Liu, C. Jin, X. Liang, Q. Chen, Adv. Funct. Mater. 17, 2478 (2007). 10.1002/adfm.200600475
26. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2007).