SCOPUS 정보 검색 플랫폼

Volumn 7, Issue 20, 2011, Pages 2873-2877

Resolving in situ specific-contact, current-crowding, and channel resistivity in nanowire devices: A case study with silver nanowires

(6) Koleśnik, Maria M a Hansel, Stefan a Lutz, Tarek a Kinahan, Niall a Boese, Markus a Krstić, Vojislav a

a TRINITY COLLEGE DUBLIN (Ireland)

Author keywords

contact resistance; current crowding; electronics; nanodevices; nanowires

Indexed keywords

CHANNEL RESISTIVITY; COMPREHENSIVE STUDIES; CONTACT ELECTRODES; CONTACT GEOMETRY; CURRENT CROWDING; DEVICE LAYOUT; DEVICE PERFORMANCE; IN-SITU; NANO-DEVICES; NANOWIRE DEVICES; SILVER NANOWIRES; TRANSFER LENGTHS;

CONTACT RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT;

NANOWIRES;

NANOWIRE; SILVER;

ARTICLE; CHEMISTRY; ELECTRONICS; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

ELECTRONICS; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; NANOWIRES; SILVER;

EID: 80054045400 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.201100600 Document Type: Article

Times cited : (13)

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