Preparation and properties of nitrogen doped p-type zinc oxide films by reactive magnetron sputtering

Vacuum

Volumn 101, Issue , 2014, Pages 313-316

  Wang, Zhanwu ^a   Yue, Yonggao ^a   Cao, Yan ^a  

^a JILIN NORMAL UNIVERSITY   (China)

Author keywords

Magnetron sputtering; Nitrogen doping; Properties; ZnO film

Indexed keywords

NEAR BAND EDGE EMISSIONS; NITROGEN-DOPING; PROPERTIES; RADIO FREQUENCY MAGNETRON SPUTTERING; REACTIVE MAGNETRON SPUTTERING; ROOM-TEMPERATURE RESISTIVITY; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ZNO FILMS; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

CHEMICAL ANALYSIS; MAGNETRON SPUTTERING; METALLIC FILMS; NITROGEN; OXIDE FILMS; QUARTZ; SEMICONDUCTOR DOPING; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); FILM PREPARATION; HALL MOBILITY; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING FILMS; ZINC; ZINC OXIDE;

ZINC OXIDE; NITROGEN;

EID: 84886713117     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2013.10.001     Document Type: Article

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