Structural and optical properties of nitrogen doped ZnO films

Vacuum

Volumn 83, Issue 10, 2009, Pages 1274-1278

  Alves, E ^a   Franco, N ^a   Barradas, N P ^a   Munnik, F ^b   Monteiro, T ^c   Peres, M ^c   Wang, J ^d   Martins, R ^d   Fortunato, E ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Nitrogen doping; RF magnetron sputtering; ZnO films

Indexed keywords

ANNEALED SAMPLES; EXCITON-BINDING ENERGY; HEAVY-ION ELASTIC RECOIL DETECTION ANALYSIS; HI-ERDA; HIGH ENERGY; HOMOGENEOUS COMPOSITION; LOW TEMPERATURES; NEAR BAND EDGE; NITROGEN DOPING; NITROGEN-DOPED; OPTICAL QUALITIES; P-TYPE DOPANT; P-TYPE DOPING; POTENTIAL APPLICATIONS; RADIO FREQUENCY POWER; RF MAGNETRON SPUTTERING; RUTHERFORD BACK-SCATTERING; SPINTRONICS; STRUCTURAL AND OPTICAL PROPERTIES; WIDE BAND GAP OXIDES; ZNO FILMS;

BINDING ENERGY; CORUNDUM; DOPING (ADDITIVES); ENERGY GAP; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; NITROGEN; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRUCTURAL PROPERTIES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

OPTICAL FILMS;

EID: 67349258288     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.03.022     Document Type: Article

References (17)

1. Service R.F. Science 276 (1997) 895
2. Soki T., Hatanaka Y., and Look D.C. Appl Phys Lett 76 (2000) 3257
3. Liu Y., Gorla C.R., Lian S., Emanetoglu N., and Lu Y. J Electron Mater 29 (2000) 60
4. Kobayashi A., Sankey O.F., and Dow J.D. Phys Rev B 28 (1983) 946
5. Zu P., Tang Z.K., Wong G.K.L., Kawasaki M., Ohtomo A., Koinuma H., et al. Solid State Commun 103 (1997) 459
6. Fujimura N., Nishihara T., Goto S., Xu J., and Ito T. J Cryst Growth 130 (1993) 269
7. Wang J., Sallet V., Jomard F., Botelho M.A., Elamurugu E., Martins R., et al. Thin Solid Films 515 (2007) 8780
8. Han L., Mei F., Liu C., Marques C., and Alves E. Physica E 40 (2008) 699-704
9. Barradas N.P., Jeynes C., and Harry M.A. Nucl Instrum Methods Phys Res B 136 (1998) 1163
10. Futsuhara M., Yoshioka K., and Takai O. Thin Solid Films 317 (1998) 322
11. Wang J, Elamurugu E, Franco N, Alves E, Botelho MA, Gonçalves G, et al. J Nanosci Nanotechnol 2009;9:813.
12. Kaschner A., Haboeck U., Strassburg M., Strassburg M., Kaczmarczyk G., Hoffmann A., et al. Appl Phys Lett 80 (2002) 1909
13. Sann J., Stehr J., Hofstaeller A., Hofmann D.M., Neumann A., Lerch M., et al. Phys Rev B 76 (2007) 195203
14. Reuss F., Kirchner C., Gruber T., Kling R., Maschek S., Limmer W., et al. J Appl Phys 95 (2004) 3385
15. Friedrich F., and Nickel N.H. Appl Phys Lett 91 (2007) 11903
16. Bundesmann C., Ashkenov N., Schubert M., Spemann D., Butz T., Kaidashev E.M., et al. Appl Phys Lett 83 (2003) 1974
17. Sun X., Maeda K., Faucheur M., Teramura K., and Domen K. Appl Cat A 327 (2007) 114