Site-controlled growth of single GaN quantum dots in nanowires by MOCVD

Journal of Crystal Growth

Volumn 370, Issue , 2013, Pages 328-331

  Choi, Kihyun ^a   Arita, Munetaka ^b   Kako, Satoshi ^a   Arakawa, Yasuhiko ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. GaN quantum dots

Indexed keywords

DEFECT DENSITY; DEPOSITION; GALLIUM NITRIDE; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; NANOWIRES; OPTICAL PROPERTIES; SAPPHIRE; SIGNAL TO NOISE RATIO; SURFACE MORPHOLOGY; VAPOR DEPOSITION;

BACKGROUND EMISSIONS; CONTROLLED GROWTH; GAN QUANTUM DOTS; HIGH DEFECT DENSITIES; LUMINESCENCE INTENSITY; LUMINESCENCE PEAK; SELECTIVE EPITAXY; STRUCTURE DESIGN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84885854829     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.09.019     Document Type: Article

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