Atom-by-atom simulations of graphene growth by decomposition of SiC (0001): Impact of the substrate steps

Applied Physics Letters

Volumn 103, Issue 14, 2013, Pages

  Morita, Masato ^a   Norimatsu, Wataru ^a   Qian, Hu Jun ^a   Irle, Stephan ^a   Kusunoki, Michiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; GRAPHENE; SILICON; SILICON CARBIDE; SILICON COMPOUNDS;

ATOMIC SCALE; CARBON CHAINS; CARBON NETWORK; DENSITY FUNCTIONAL TIGHT BINDINGS; GRAPHENE GROWTH; SILICON ATOMS; THREE-DIMENSIONAL STRUCTURE; TRAPPING SITES;

CRYSTAL ATOMIC STRUCTURE;

EID: 84885588301     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824425     Document Type: Article

References (21)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. K. S. Novoselov, V. I. Falko, L. Colombo, P. R. Gellert, M. G. Schwab, and K. Kim, Nature 490, 192 (2012) 10.1038/nature11458.
3. S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Shedin, D. C. Elias, J. A. Jaszczak, and A. K. Geim, Phys. Rev. Lett. 100, 016602 (2008). 10.1103/PhysRevLett.100.016602
4. C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, Science 312, 1191 (2006). 10.1126/science.1125925
5. W. Norimatsu and M. Kusunoki, Chem. Phys. Lett. 468, 52 (2009). 10.1016/j.cplett.2008.11.095
6. W. Norimatsu and M. Kusunoki, J. Nanosci. Nanotech. 10, 3884 (2010). 10.1166/jnn.2010.1998
7. W. Norimatsu and M. Kusunoki, Physica E 42, 691 (2010). 10.1016/j.physe.2009.11.151
8. W. Norimatsu and M. Kusunoki, Phys. Rev. B 81, 161410(R) (2010). 10.1103/PhysRevB.81.161410
9. W. Norimatsu, J. Takada, and M. Kusunoki, Phys. Rev. B 84, 035424 (2011). 10.1103/PhysRevB.84.035424
10. K. Kimura, K. Shoji, Y. Yamamoto, S. Arai, W. Norimatsu, and M. Kusunoki, Phys. Rev. B 87, 075431 (2013). 10.1103/PhysRevB.87.075431
11. Ph. Avouris and X. Fengnian, MRS Bull. 37, 1225 (2012). 10.1557/mrs.2012.206
12. Z. Guo, R. Dong, P. S. Chakraborty, N. Lourenco, J. Palmer, Y. Hu, M. Ruan, J. Hankinson, J. Kunc, J. D. Cressler, C. Berger, and W. A. de Heer, Nano Lett. 13, 942 (2013). 10.1021/nl303587r
13. S. Irle, Z. Wang, G. Zheng, K. Morokuma, and M. Kusunoki, J. Chem. Phys. 125, 044702 (2006). 10.1063/1.2212402
14. Z. Wang, S. Irle, G. Zheng, M. Kusunoki, and K. Morokuma, J. Phys. Chem. C 111, 12960 (2007). 10.1021/jp072208d
15. C. Tang, L. Meng, H. Xiao, and J. Zhong, J. Appl. Phys. 103, 063505 (2008). 10.1063/1.2894728
16. H. Kageshima, H. Hibino, M. Nagase, and H. Yamaguchi, Appl. Phys. Express 2, 065502 (2009). 10.1143/APEX.2.065502
17. H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase, Jpn. J. Appl. Phys., Part 1 50, 095601 (2011). 10.1143/JJAP.50.095601
18. F. Ming and A. Zangwill, Phys. Rev. B 84, 115459 (2011). 10.1103/PhysRevB.84.115459
19. F. Ming and A. Zangwill, J. Phys. D: Appl. Phys. 45, 154007 (2012). 10.1088/0022-3727/45/15/154007
20. M. Inoue, H. Kageshima, Y. Kangawa, and K. Kakimoto, Phys. Rev. B 86, 085417 (2012). 10.1103/PhysRevB.86.085417
21. See supplementary material at http://dx.doi.org/10.1063/1.4824425 E-APPLAB-103-007341 for the movies.