Assessing antisite defect and impurity concentrations in Bi 2Te3 based thin films by high-accuracy chemical analysis

Advanced Functional Materials

Volumn 23, Issue 39, 2013, Pages 4969-4976

  Peranio, Nicola ^a   Winkler, Markus ^b   Dürrschnabel, Michael ^a   König, Jan ^b   Eibl, Oliver ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

Author keywords

charge transport; doping; structure property relationships; thermoelectrics; thin films

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; ELECTRICAL CONDUCTIVITY; ENERGY DISPERSIVE X-RAY; HIGH-LATERAL RESOLUTION; STRUCTURE PROPERTY RELATIONSHIPS; THERMOELECTRIC PROPERTIES; THERMOELECTRICS; WAVELENGTH-DISPERSIVE X-RAY SPECTROMETRIES;

CARRIER CONCENTRATION; CHARGE TRANSFER; DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; IMPURITIES; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; POINT DEFECTS; SEMICONDUCTOR DOPING; SPECTROMETRY; THERMOELECTRIC POWER; TRANSPORT PROPERTIES;

THIN FILMS;

EID: 84885573586     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201300606     Document Type: Article

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