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Volumn 39, Issue 9, 2010, Pages 1981-1986
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Vapor annealing as a post-processing technique to control carrier concentrations of Bi 2Te 3 thin films
a
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Author keywords
Electronic properties; thermoelectric materials; thin films
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Indexed keywords
BISMUTH TELLURIDE;
GASPHASE;
HIGHER TEMPERATURES;
LOW TEMPERATURE SYNTHESIS;
MASS TRANSPORT;
NON-EQUILIBRIUM CONCENTRATIONS;
POST-PROCESSING TECHNIQUES;
RATE LIMITING;
RATE-LIMITING STEPS;
STEADY STATE;
THERMOELECTRIC MATERIAL;
VAPOR ANNEALING;
ANNEALING;
BISMUTH;
CARRIER MOBILITY;
CONCENTRATION (PROCESS);
ELECTRONIC PROPERTIES;
MASS TRANSFER;
MATERIALS PROPERTIES;
TELLURIUM;
TELLURIUM COMPOUNDS;
THERMOELECTRIC EQUIPMENT;
THERMOELECTRICITY;
THIN FILMS;
VAPOR DEPOSITION;
VAPORS;
CARRIER CONCENTRATION;
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EID: 77956228969
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-009-1038-2 Document Type: Article |
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Times cited : (24)
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References (10)
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