Doping and defect structure of tetradymite-type crystals

Journal of Electronic Materials

Volumn 39, Issue 9, 2010, Pages 2162-2164

  Drasar, C ^a   Lostak, P ^a   Uher, C ^b  

^a UNIVERSITY OF PARDUBICE   (Czech Republic)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

doping; physical properties; point defects; Tetradymite semiconductors

Indexed keywords

ACTIVE ELEMENTS; ANTI-SITE DEFECT; BASIC IDEA; DOPING; DOPING EFFICIENCY; DOPING ELEMENTS; FREE CHARGE CARRIERS; IT IMPACT; NATIVE DEFECT; NON-STOICHIOMETRY; POINT DEFECT MODELS; SUB-LATTICES; TETRADYMITE SEMICONDUCTORS; THERMOELECTRIC COOLER;

CRYSTAL STRUCTURE; CRYSTALS; POINT DEFECTS; SEMICONDUCTOR DOPING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TRANSPORT PROPERTIES;

DEFECTS;

EID: 77956230712     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0986-x     Document Type: Article

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