Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi 2Te 3 and Sb 2Te 3 thin films

Journal of Alloys and Compounds

Volumn 521, Issue , 2012, Pages 163-173

  Peranio, N ^a   Winkler, M ^b   Bessas, D ^c,d   Aabdin, Z ^a   Konig J ^b   Bottner H ^b   Hermann, R P ^c,d   Eibl, O ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d UNIVERSITY OF LIÈGE   (Belgium)

Author keywords

Composition fluctuations; Microstructure; Thermoelectric materials; Transmission electron microscopy; Vapor deposition; X ray diffraction

Indexed keywords

ANNEALED FILMS; AS-DEPOSITED FILMS; CHEMICAL COMPOSITIONS; COMPOSITION FLUCTUATIONS; CROSS SECTION; DEPOSITION TECHNIQUE; GRAIN BOUNDARY PHASE; GRAIN SIZE; GROWTH DIRECTIONS; HIGH ENERGY X-RAY DIFFRACTION; HIGH MOBILITY; HIGH POTENTIAL; IN-PLANE; LAYER STRUCTURES; LAYER-BY-LAYER GROWTH; MBE DEPOSITION; METALLIC LAYERS; P-TYPE; PREPARATION PROCESS; ROOM TEMPERATURE; SECONDARY PHASE; SINGLE-PHASE THIN FILMS; STRUCTURAL CHARACTERIZATION; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES;

ALLOYING; CRYSTALLOGRAPHY; FILM GROWTH; GRAIN BOUNDARIES; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SILICON COMPOUNDS; SINGLE CRYSTALS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

VAPOR DEPOSITION;

EID: 84857448351     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.01.108     Document Type: Article

References (40)

1. D.M. Rowe CRC Handbook of Thermoelectrics 1995 CRC Boca Raton, FL Chapter 19
2. L.D. Hicks, and M.S. Dresselhaus Phys. Rev. B 47 1993 12727 12731
3. R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O'Quinn Nature (London) 413 2001 597 602
4. N. Peranio, O. Eibl, and J. Nurnus J. Appl. Phys. 100 2006 114306
5. D.M. Rowe Thermoelectrics Handbook Macro to Nano 2006 CRC Press Boca Raton, FL Chapter 48.3.6
6. B. Huang, C. Lawrence, A. Gross, G.-S. Hwang, N. Ghafouri, S.-W. Lee, H. Kim, C.-P. Li, C. Uher, K. Najafi, and M. Kaviany J. Appl. Phys. 104 2008 113710
7. L.W. da Silva, M. Kaviany, and C. Uher J. Appl. Phys. 97 2005 114903
8. L.M. Goncalves, P. Alpuim, G. Min, D.M. Rowe, C. Couto, and J.H. Correia Vacuum 82 2008 1499 1502
9. H. Zou, D.M. Rowe, and S.G.K. Williams Thin Solid Films 408 2002 270 274
10. H. Zou, D.M. Rowe, and G. Min J. Cryst. Growth 222 2001 82 87
11. L.M. Goncalves, C. Couto, P. Alpuim, A.G. Rolo, F. Völklein, and J.H. Correia Thin Solid Films 518 2010 2816 2821
12. E. Charles, E. Groubert, and A. Boyer J. Mater. Sci. Lett. 7 1988 575 577
13. G. Wang, L. Endicott, and C. Uher Sci. Adv. Mater. 3 2011 539 560
14. A. Mzerd, D. Sayah, G. Brun, J.C. Tedenac, and A. Boyer J. Mater. Sci. Lett. 14 1995 194 197
15. H. Böttner, A. Schubert, H. Kölbel, A. Gavrikov, A. Mahlke, J. Nurnus, Proceedings of the 23rd International Conference on Thermoelectrics (ICT 2004), Adelaide, Australia, 2004 (IEEE, Piscataway, NJ, 2004), Paper No. 9.
16. D.C. Johnson Curr. Opin. Solid State Mater. Sci. 3 1998 159 167
17. A. Taylor, C. Mortensen, R. Rostek, N. Nguyen, and D.C. Johnson J. Electron. Mater. 39 2010 1981 1986
18. D. Eyidi, D. Maier, O. Eibl, and M. Westphal Phys. Status Solidi A 187 2001 585 600
19. N. Peranio, and O. Eibl Phys. Status Solidi A 204 2007 3243 3255
20. S. Nakajima J. Phys. Chem. Solids 24 1963 479 485
21. H. Hahn, W. Seemann, and H.-L. Kohn Z. Anorg. Allg. Chem. 369 1969 48 58
22. J. Nurnus, H. Böttner, H. Beyer, A. Lamprecht, Proceedings of the 18th International Conference on Thermoelectrics (ICT'99), Baltimore, MD, 1999 (IEEE, Piscataway, NJ, 1999), Catalog No. 99TH 8407, pp. 696-699.
23. J.D. König, M. Winkler, S. Buller, W. Bensch, U. Schürmann, L. Kienle, and H. Böttner J. Electron. Mater. 40 2011 1266 1270
24. M. Winkler, D., Ebling, H. Böttner, L. Kirste, Proceedings of 8th European Conference on Thermoelectrics, Como, Italy, 2010, pp. 26-32.
25. N. Peranio, and O. Eibl J. Appl. Phys. 103 2008 024314
26. G. Cliff, and G.W. Lorimer J. Microsc. 103 1975 203 207
27. T.L. Anderson, and H.B. Krause Acta Crystallogr. B 30 1974 1307 1310
28. N. Peranio, and O. Eibl Phys. Status Solidi A 206 2009 42 49
29. G.R. Miller, and C.-Y. Li J. Phys. Chem. Solids 26 1965 173 177
30. N. Peranio, M. Winkler, Z. Aabdin, J. König, H. Böttner, and O. Eibl Phys. Status Solidi A 209 2012 289 293
31. H. Köhler Phys. Status Solidi B 74 1976 591 600
32. H. Köhler Phys. Status Solidi B 73 1976 95 104
33. M. Kim, A.J. Freeman, and C.G. Geller Phys. Rev. B 72 2005 035205
34. G. Wang, and T. Cagin Phys. Rev. B 76 2007 075201
35. P. Larson Phys. Rev. B 68 2003 155121
36. H.J. Goldsmid Proc. Phys. Soc. Lond. 71 1958 633 646
37. L.R. Testardi, J.N. Bierly Jr., and F.J. Donahoe J. Phys. Chem. Solids 23 1962 1209 1217
38. M. Stordeur, M. Stölzer, H. Sobotta, and V. Riede Phys. Status Solidi B 150 1988 165 176
39. Y. Lan, B. Poudel, Y. Ma, D. Wang, M.S. Dresselhaus, G. Chen, and Z. Ren Nano Lett. 9 2009 1419 1422
40. N. Peranio, Z. Aabdin, W. Töllner, M. Winkler, J. König, O. Eibl, K. Nielsch, H. Böttner, MRS Proceedings 1329, 2011, mrss11-1329-i10-21 doi:10.1557/opl.2011.1238.