Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

Solid-State Electronics

Volumn 88, Issue , 2013, Pages 65-68

  Martin, Dominik ^a   Yurchuk, Ekaterina ^a   Müller, Stefan ^a   Müller, Johannes ^b   Paul, Jan ^b   Sundquist, Jonas ^b   Slesazeck, Stefan ^a   Schlösser, Till ^c   Van Bentum, Ralf ^c   Trentzsch, Martin ^c   Schröder, Uwe ^a   Mikolajick, Thomas ^a,d  

^a NAMLAB GGMBH   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c GLOBALFOUNDRIES   (Germany)

^d DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

EFET; Ferroelectricity; HfO2; Non volatile memory; Scalability

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; DIGITAL STORAGE; FERROELECTRIC MATERIALS; FERROELECTRICITY; GATE DIELECTRICS; HAFNIUM OXIDES; METALS; MOS DEVICES; NONVOLATILE STORAGE; OXIDE SEMICONDUCTORS; SCALABILITY; SEMICONDUCTOR DOPING; TRANSISTORS;

CAPACITOR STRUCTURES; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; EFET; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC PROPERTY; HFO2; NON-VOLATILE MEMORY; TECHNOLOGY NODES;

FIELD EFFECT TRANSISTORS;

EID: 84885019263     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.04.013     Document Type: Article

References (10)

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