Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

Journal of Crystal Growth

Volumn 334, Issue 1, 2011, Pages 51-56

  Mandl, Bernhard ^a,b   Dey, Anil W ^a   Stangl, Julian ^b   Cantoro, Mirco ^c   Wernersson, Lars Erik ^a   Bauer, Günther ^b   Samuelson, Lars ^a   Deppert, Knut ^a   Thelander, Claes ^a  

^a LUND UNIVERSITY   (Sweden)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c IMEC   (Belgium)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Nanowire growth; B2. Semiconductor IIIV materials

Indexed keywords

A3. NANOWIRE GROWTH; ETCHED HOLES; GROWTH MECHANISMS; GROWTH PARAMETERS; INAS; INDIUM PARTICLES; METAL-ORGANIC VAPOR PHASE EPITAXY; NANOWIRE GROWTH; NUCLEATION AND GROWTH; SELF-SEEDED; SEMICONDUCTOR III-V MATERIALS;

INDIUM; INDIUM ARSENIDE; NANOWIRES; NUCLEATION; SEMICONDUCTING INDIUM; SILICON COMPOUNDS;

FILM GROWTH;

EID: 80053308317     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.08.023     Document Type: Article

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