Increased wafer yield in silicon ingots by the application of high purity silicon nitride-coating and high purity crucibles

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 1059-1061

  Geyer, Bert ^a   Schwichtenberg, Gerd ^a   Müller, Armin ^a  

^a Deutsche Solar AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; INFRARED RADIATION; SILICA; SILICON NITRIDE; SOLAR CELLS;

INFRARED TRANSPARENCY; INNER WALLS; MINORITY-CARRIER LIFETIME;

SILICON WAFERS;

EID: 27944483029     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Lange, W. Krumbe, and H. Gatzweiler, "Melting Pot with Silicon Protective Layers, Method for Applying said Layer and the Use Thereof", Patent EP 0963 464, 22.01.1998.
2. M. A. Costantini et al. "Release Coating System for Crucibles", Patent US 6,491,971 B2, Dec. 10, 2002.
3. M. Ghosh, T. Bähr and A. Müller, "Larger Ingots for Multi-crystalline Silicon Wafers", 19th European Photovoltaic Energy Conference and Exhibition, 2004.
4. A. A. Istratov, H. Hieslmair, E. R. Weber, Applied Physics A, Vol. 69, 1999, pp. 13-44.