Imaging of metastable defects in silicon

IEEE Journal of Photovoltaics

Volumn 1, Issue 2, 2011, Pages 168-173

  Schubert, Martin C ^a   Habenicht, Holger ^b   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b CENTROTHERM PHOTOVOLTAICS AG   (Germany)

Author keywords

Boron oxygen complex; chromium; iron; photoluminescence imaging (PLI); silicon

Indexed keywords

BORON-OXYGEN COMPLEX; BORON-OXYGEN DEFECTS; CARRIER DIFFUSIONS; CZOCHRALSKI SILICON; IMPURITY CONCENTRATION; MEASUREMENT RESULTS; METASTABLE DEFECT; MULTI-CRYSTALLINE SILICON; P-TYPE; P-TYPE SILICON; PHOTOLUMINESCENCE IMAGING; QUANTITATIVE INFORMATION; SPECIFIC STATE; STATE OF THE ART;

BORON; CHROMIUM; DEFECTS; IRON; PHOTOLUMINESCENCE; POINT DEFECTS; POLYSILICON; SILICON;

SILICON WAFERS;

EID: 84865197160     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2169942     Document Type: Article

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