Large-area free-standing ultrathin single-crystal silicon as processable materials

Nano Letters

Volumn 13, Issue 9, 2013, Pages 4393-4398

  Wang, Shuang ^a   Weil, Benjamin D ^a   Li, Yanbin ^a   Wang, Ken Xingze ^a   Garnett, Erik ^a   Fan, Shanhui ^a   Cui, Yi ^a,b  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

flexibility; light trapping; nanotexture; Ultrathin single crystal silicon

Indexed keywords

FLEXIBILITY; LIGHT-TRAPPING; MECHANICAL FLEXIBILITY; NANO-TEXTURE; PROCESSABLE MATERIALS; SEMICONDUCTOR INDUSTRY; SINGLE CRYSTAL SILICON; WET AND DRY ETCHINGS;

FABRICATION; MATERIALS HANDLING; MONOCRYSTALLINE SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

SILICON WAFERS;

NANOMATERIAL; SILICON;

CHEMISTRY; CRYSTALLIZATION; LIGHT; NANOTECHNOLOGY; POWER SUPPLY; SEMICONDUCTOR; SOLAR ENERGY; SURFACE PROPERTY; ARTICLE;

CRYSTALLIZATION; ELECTRIC POWER SUPPLIES; LIGHT; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTORS; SILICON; SOLAR ENERGY; SURFACE PROPERTIES;

EID: 84884250812     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl402230v     Document Type: Article

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