Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

Nano Letters

Volumn 11, Issue 10, 2011, Pages 4393-4399

  Fahad, Hossain M ^a   Smith, Casey E ^a   Rojas, Jhonathan P ^a   Hussain, Muhammad M ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

drive current; field effect transistor (FET); high performance; nanotube; nanowire; shortchannel effect; Silicon; volume inversion

Indexed keywords

DRIVE CURRENTS; FIELD EFFECT TRANSISTOR (FET); HIGH PERFORMANCE; SHORT-CHANNEL EFFECT; VOLUME INVERSION;

BALLISTICS; CARRIER CONCENTRATION; DRAIN CURRENT; ELECTRON BEAM LITHOGRAPHY; LOGIC GATES; MESFET DEVICES; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; NANOTUBES; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM THEORY;

TRANSISTORS;

EID: 80054023199     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202563s     Document Type: Article

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