Effects of annealing temperature on the microstructure, optical, ferroelectric and photovoltaic properties of BiFeO3 thin films prepared by sol-gel method

Ceramics International

Volumn 39, Issue 8, 2013, Pages 8729-8736

  Lin, Zebin ^a   Cai, Wei ^a   Jiang, Weihai ^a   Fu, Chunlin ^a,b   Li, Chun ^c   Song, Yunxia ^a  

^a CHONGQING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c CHINA UNIVERSITY OF PETROLEUM   (China)

Author keywords

A. Annealing temperature; C. Ferroelectric properties; C. Photovoltaic; D. Bismuth ferrite

Indexed keywords

ANNEALING TEMPERATURES; BISMUTH FERRITES; COERCIVE ELECTRIC FIELD; FERROELECTRIC PROPERTY; OPEN-CIRCUIT PHOTOVOLTAGE; PHOTOVOLTAIC; POWER CONVERSION EFFICIENCIES; SHORT-CIRCUIT PHOTOCURRENT DENSITIES;

BISMUTH; ELECTRIC FIELDS; FERRITE; FERROELECTRICITY; FILM PREPARATION; MICROSTRUCTURE; PHOTOVOLTAIC EFFECTS; SOL-GEL PROCESS; SOL-GELS; THIN FILMS;

ANNEALING;

EID: 84883748111     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2013.04.058     Document Type: Article

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