SCOPUS 정보 검색 플랫폼

Volumn 61, Issue 17, 2013, Pages 6443-6452

Role of epitaxial microstructure, stress and twin boundaries in the metal-insulator transition mechanism in VO2/Al2O 3 heterostructures

(6) Li, X a,b,c Gloter, A c Gu, H a Cao, X a Jin, P a Colliex, C c

a SHANGHAI INSTITUTE OF CERAMICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

c UNIVERSITÉ PARIS SUD (France)

Author keywords

Epitaxial orientation; Metal to insulator transition; Scanning transmission electron microscopy; Twin boundary; VO2 thin film

Indexed keywords

ANNULAR DARK-FIELD IMAGING; ENHANCED TETRAGONALITY; EPITAXIAL MICROSTRUCTURE; EPITAXIAL ORIENTATIONS; EPITAXIAL RELATIONSHIPS; METAL-TO-INSULATOR TRANSITIONS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TWIN BOUNDARIES;

ALUMINUM; METAL INSULATOR TRANSITION; MICROSTRUCTURE; SAPPHIRE; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84883740622 PISSN: 13596454 EISSN: None Source Type: Journal
DOI: 10.1016/j.actamat.2013.07.022 Document Type: Article

Times cited : (18)

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