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Volumn 59, Issue 16, 2011, Pages 6362-6368
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Control of room-temperature defect-mediated ferromagnetism in VO 2 films
a
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Author keywords
Ferromagnetic; Semiconductor to Metal Transition (SMT); Vanadium dioxide
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Indexed keywords
AMBIENT CONDITIONS;
C-PLANE SAPPHIRE SUBSTRATES;
FERROMAGNETIC;
FERROMAGNETIC PROPERTIES;
GROWTH PARAMETERS;
GROWTH PROCESS;
OXIDE SYSTEMS;
OXYGEN PARTIAL PRESSURE;
PULSED-LASER DEPOSITION TECHNIQUE;
ROOM TEMPERATURE;
SEMICONDUCTOR-TO-METAL TRANSITIONS;
VANADIUM DIOXIDE;
VANADIUM OXIDES;
DEFECTS;
DEPOSITION;
EPITAXIAL FILMS;
FERROMAGNETIC MATERIALS;
FERROMAGNETISM;
MAGNETIC MOMENTS;
MAGNETIC PROPERTIES;
PULSED LASER DEPOSITION;
VANADIUM;
VANADIUM ALLOYS;
VANADIUM COMPOUNDS;
OXIDE FILMS;
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EID: 80051790677
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2011.06.047 Document Type: Article |
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Times cited : (18)
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References (16)
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