Thickness dependence of optical properties of VO 2 thin films epitaxially grown on sapphire (0 0 0 1)

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 449-452

  Xu, Gang ^a   Jin, Ping ^a   Tazawa, Masato ^a   Yoshimura, Kazuki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Energy efficient window; Optical design; Thin film; Vanadium dioxide

Indexed keywords

EPITAXIAL GROWTH; HYSTERESIS; MAGNETRON SPUTTERING; OPTICAL DESIGN; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; THICKNESS MEASUREMENT; VANADIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ENERGY-EFFICIENT WINDOW; SEMICONDUCTOR PHASE; TRANSMITTANCE; VANADIUM DIOXIDE;

THIN FILMS;

EID: 15844368351     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.157     Document Type: Conference Paper

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