Effects of gate insulator on thin-film transistors with ZnO channel layer deposited by plasma-assisted atomic layer deposition

IEEE/OSA Journal of Display Technology

Volumn 9, Issue 9, 2013, Pages 694-698

  Kawamura, Yumi ^a   Horita, Masahiro ^a,b   Ishikawa, Yasuaki ^a,b   Uraoka, Yukiharu ^a,b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Atomic layer deposition; thin film transistor (TFT); ZnO

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); CHANNEL LAYERS; FABRICATION TEMPERATURE; FIELD-EFFECT MOBILITIES; THERMAL-ANNEALING; THIN-FILM TRANSISTOR (TFTS); ZINC OXIDE (ZNO); ZNO;

DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84883449064     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2012.2213237     Document Type: Article

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