Temperature dependent photoluminescence excitation spectroscopy of GaN quantum dots in site controlled GaN/AlGaN nanowires

Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

  Holmes, Mark J ^a   Kako, Satoshi ^a,b   Choi, Kihyun ^b   Podemski, Pawel ^a   Arita, Munetaka ^a   Arakawa, Yasuhiko ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORE-SHELL-TYPE; GAN QUANTUM DOTS; GAN/ALGAN; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; PHOTOLUMINESCENCE EXCITATION SPECTRUM; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

EXCITED STATES; GALLIUM NITRIDE; NANOWIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84883163267     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.08JL02     Document Type: Article

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