Top-gate GaN thin-film transistors based on AlN/GaN heterostructures

IEEE Electron Device Letters

Volumn 33, Issue 9, 2012, Pages 1282-1284

  Chen, Rongsheng ^a   Zhou, Wei ^a   Zhang, Meng ^a   Kwok, Hoi Sing ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlN; dc sputtering; GaN; thin film transistors (TFTs)

Indexed keywords

ALN; ALN THIN FILMS; ALN/GAN; DC SPUTTERING; ELECTRICAL PERFORMANCE; FIELD MOBILITY; GAN; REACTIVE DC MAGNETRON SPUTTERING; ROOM TEMPERATURE; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS);

FLAT PANEL DISPLAYS; GALLIUM NITRIDE; QUARTZ;

THIN FILM TRANSISTORS;

EID: 84865431992     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2206555     Document Type: Article

References (12)

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