Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2-Al2O 3 gate dielectrics

Current Applied Physics

Volumn 11, Issue 4 SUPPL., 2011, Pages

  Son, Heegeun ^a   Kim, Jeongsoo ^a   Yang, Jungil ^a   Cho, Dongkyu ^a   Yi, Moonsuk ^a  

^a Pusan National University   (South Korea)

Author keywords

Al2O3; HfAlO; HfO2; IZO; Oxide TFT; Transparent TFT

Indexed keywords

ACTIVE CHANNELS; AFM; AMORPHOUS STRUCTURES; COMPOSITIONAL RATIO; COSPUTTERING; DEVICE CHARACTERISTICS; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; HFALO; HFO2; HIGH DIELECTRIC CONSTANTS; INDIUM ZINC OXIDES; IZO; MICROCRYSTALLINE STRUCTURES; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SOURCE/DRAIN ELECTRODES; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBSTRATE HEATING; SUBTHRESHOLD SWING; TRANSPARENT OXIDES; TRANSPARENT TFT; TRANSPARENT THIN FILM TRANSISTOR; XRD STUDIES;

ALUMINUM; AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ENERGY GAP; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; INDIUM; MAGNETRON SPUTTERING; SPECTROSCOPIC ELLIPSOMETRY; THIN FILM TRANSISTORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

HAFNIUM OXIDES;

EID: 80455164677     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.03.080     Document Type: Conference Paper

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