Effect of temperature and humidity on NO 2 and NH 3 gas sensitivity of bottom-gate graphene FETs prepared by ICP-CVD

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1084-1086

  Kim, Chang Hee ^a   Yoo, Sung Won ^a   Nam, Dong Woo ^a   Seo, Sunae ^b   Lee, Jong Ho ^a  

^a Seoul National University   (South Korea)

^b Sejong University   (South Korea)

Author keywords

Conductivity; field effect transistor (FET); graphene; humidity; inductively coupled plasma chemical vapor deposition (CVD) (ICP CVD); NH 3; NO 2; temperature

Indexed keywords

CONDUCTIVITY CHANGES; EFFECT OF TEMPERATURE; GAS SENSITIVITY; ICP-CVD; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; NH 3; SENSING PERFORMANCE;

ATMOSPHERIC HUMIDITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; INDUCTIVELY COUPLED PLASMA; NITROGEN OXIDES; PLASMA CVD; TEMPERATURE; VAPORS;

GRAPHENE;

EID: 84862888452     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2193867     Document Type: Article

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