Self-assembled in-plane gate oxide-based homojunction thin-film transistors

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 500-502

  Jiang, Jie ^a,b   Sun, Jia ^b   Zhou, Bin ^b   Lu, Aixia ^b   Wan, Qing ^a,b  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b HUNAN UNIVERSITY   (China)

Author keywords

Electric double layer (EDL); homojunction; in plane gate thin film transistors (TFTs); low voltage; SiO2 based solid electrolyte

Indexed keywords

ELECTRIC DOUBLE LAYER; HOMOJUNCTION; IN-PLANE GATE THIN-FILM TRANSISTORS (TFTS); LOW VOLTAGES; SIO2-BASED SOLID ELECTROLYTE;

ELECTROCHEMISTRY; SILICON COMPOUNDS; SOLID ELECTROLYTES;

THIN FILM TRANSISTORS;

EID: 79953051133     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2104133     Document Type: Article

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