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Applied Physics Letters

Volumn 98, Issue 9, 2011, Pages

Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature

(6) Dai, Mingzhi a Wu, Guodong a Yang, Yue a Jiang, Jie a Li, Li a Wan, Qing a

a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; DOUBLE LAYERS; ELECTROSTATIC MODULATION; EXPERIMENTAL DATA; GATE CAPACITANCE; INDIUM TIN OXIDE; LOW-VOLTAGE; ROOM TEMPERATURE; TWO-DIMENSIONAL SIMULATIONS; VALENCE BAND DOS;

ELECTRON MOBILITY; INDIUM COMPOUNDS; TIN; TIN OXIDES;

THIN FILM TRANSISTORS;

EID: 79952406038 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3555333 Document Type: Article

Times cited : (8)

References (12)

1
- 84988044894
- 1476-1122, 10.1038/nmat2291
- J. H. Cho, J. Lee, Y. Xia, B. J. Kim, Y. He, M. J. Renn, T. P. Lodge, and C. D. Frisbie, Nature Mater. 1476-1122 7, 900 (2008). 10.1038/nmat2291
- (2008) Nature Mater. , vol.7 , pp. 900
- Cho, J.H.¹ Lee, J.² Xia, Y.³ Kim, B.J.⁴ He, Y.⁵ Renn, M.J.⁶ Lodge, T.P.⁷ Frisbie, C.D.⁸

2
- 64549131276
- 1616-301X, 10.1002/adfm.200801633
- H. Yuan, H. Shimotani, A. Tsukazazu, A. Tsukazaki, A. Ohtomo, M. Kawasaki, and Y. Iwasa, Adv. Funct. Mater. 1616-301X 19, 1046 (2009). 10.1002/adfm.200801633
- (2009) Adv. Funct. Mater. , vol.19 , pp. 1046
- Yuan, H.¹ Shimotani, H.² Tsukazazu, A.³ Tsukazaki, A.⁴ Ohtomo, A.⁵ Kawasaki, M.⁶ Iwasa, Y.⁷

3
- 33646133186
- 0003-6951, 10.1063/1.2193727
- A. Tsukazaki, A. Ohtomo, and M. Kawasaki, Appl. Phys. Lett. 0003-6951 88, 152106 (2006). 10.1063/1.2193727
- (2006) Appl. Phys. Lett. , vol.88 , pp. 152106
- Tsukazaki, A.¹ Ohtomo, A.² Kawasaki, M.³

4
- 32944463139
- Gate capacitance in electrochemical transistor of single-walled carbon nanotube
- DOI 10.1063/1.2173626
- H. Shimotani, T. Kanbara, Y. Iwasa, K. Tsukagoshi, Y. Aoyagi, and H. Kataura, Appl. Phys. Lett. 0003-6951 88, 073104 (2006). 10.1063/1.2173626 (Pubitemid 43261850)
- (2006) Applied Physics Letters , vol.88 , Issue.7 , pp. 073104
- Shimotani, H.¹ Kanbara, T.² Iwasa, Y.³ Tsukagoshi, K.⁴ Aoyagi, Y.⁵ Kataura, H.⁶

5
- 33751109707
- Electrolyte-gated charge accumulation in organic single crystals
- DOI 10.1063/1.2387884
- H. Shimotani, H. Asanuma, J. Takeya, and Y. Iwasa, Appl. Phys. Lett. 0003-6951 89, 203501 (2006). 10.1063/1.2387884 (Pubitemid 44772522)
- (2006) Applied Physics Letters , vol.89 , Issue.20 , pp. 203501
- Shimotani, H.¹ Asanuma, H.² Takeya, J.³ Iwasa, Y.⁴

6
- 75749088474
- 1476-1122, 10.1038/nmat2587
- J. T. Ye, S. Inoue, K. Kobayashi, Y. Kasahara, H. T. Yuan, H. Shimotani, and Y. Iwasa, Nature Mater. 1476-1122 9, 125 (2010). 10.1038/nmat2587
- (2010) Nature Mater. , vol.9 , pp. 125
- Ye, J.T.¹ Inoue, S.² Kobayashi, K.³ Kasahara, Y.⁴ Yuan, H.T.⁵ Shimotani, H.⁶ Iwasa, Y.⁷

7
- 71949120235
- 0003-6951, 10.1063/1.3271029
- A. Lu, J. Sun, J. Jiang, and Q. Wan, Appl. Phys. Lett. 0003-6951 95, 222905 (2009). 10.1063/1.3271029
- (2009) Appl. Phys. Lett. , vol.95 , pp. 222905
- Lu, A.¹ Sun, J.² Jiang, J.³ Wan, Q.⁴

8
- 77957586512
- 0741-3106
- A. X. Lu, J. Sun, J. Jiang, and Q. Wan, IEEE Electron Device Lett. 0741-3106 31, 1137 (2010).
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1137
- Lu, A.X.¹ Sun, J.² Jiang, J.³ Wan, Q.⁴

9
- 54949110958
- 1476-1122, 10.1038/nmat2310
- A. Facchetti, Nature Mater. 1476-1122 7, 839 (2008). 10.1038/nmat2310
- (2008) Nature Mater. , vol.7 , pp. 839
- Facchetti, A.¹

10
- 41649120938
- Modeling of amorphous InGaZn O4 thin film transistors and their subgap density of states
- DOI 10.1063/1.2857463
- H. -H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and S. -C. Wu, Appl. Phys. Lett. 0003-6951 92, 133503 (2008). 10.1063/1.2857463 (Pubitemid 351483707)
- (2008) Applied Physics Letters , vol.92 , Issue.13 , pp. 133503
- Hsieh, H.-H.¹ Kamiya, T.² Nomura, K.³ Hosono, H.⁴ Wu, C.-C.⁵

11
- 70350726087
- 0021-8979, 10.1063/1.3234400
- T. -C. Fung, C. -S. Chuang, C. Chen, K. Abe, R. Cottle, M. Townsend, H. Kumomi, and J. Kanicki, J. Appl. Phys. 0021-8979 106, 084511 (2009). 10.1063/1.3234400
- (2009) J. Appl. Phys. , vol.106 , pp. 084511
- Fung, T.-C.¹ Chuang, C.-S.² Chen, C.³ Abe, K.⁴ Cottle, R.⁵ Townsend, M.⁶ Kumomi, H.⁷ Kanicki, J.⁸

12
- 77649184578
- 0741-3106, 10.1109/LED.2009.2039634
- S. Lee, S. Park, S. Kim, Y. Jeon, K. Jeon, J. -H. Park, J. Park, I. Song, C. J. Kim, Y. Park, D. M. Kim, and D. H. Kim, IEEE Electron Device Lett. 0741-3106 31, 231 (2010). 10.1109/LED.2009.2039634
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 231
- Lee, S.¹ Park, S.² Kim, S.³ Jeon, Y.⁴ Jeon, K.⁵ Park, J.-H.⁶ Park, J.⁷ Song, I.⁸ Kim, C.J.⁹ Park, Y.¹⁰ Kim, D.M.¹¹ Kim, D.H.¹²

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