Non-volatile memory with self-assembled ferrocene charge trapping layer

Applied Physics Letters

Volumn 103, Issue 5, 2013, Pages

  Zhu, Hao ^a,b   Hacker, Christina A ^b   Pookpanratana, Sujitra J ^b   Richter, Curt A ^b   Yuan, Hui ^a,b   Li, Haitao ^a,b   Kirillov, Oleg ^b   Ioannou, Dimitris E ^a   Li, Qiliang ^a,b  

^a Krasnow Institute for Advanced Study   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITOR STRUCTURES; CHARGE TRAPPING LAYERS; DEVICE FABRICATIONS; INTRINSIC PROPERTY; MOLECULAR DEVICE; MOLECULAR MEMORY DEVICES; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATION;

CYCLIC VOLTAMMETRY; DATA STORAGE EQUIPMENT; ORGANOMETALLICS; PHOTOELECTRONS; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULES;

EID: 84882354734     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817009     Document Type: Article

References (21)

1. International Technology Roadmap for Semiconductors: Emerging Research Devices (2011), pp. 1-4, 6, Table ERD3.
2. T. Chen, K. Wu, H. Chung, and C. Kao, IEEE Electron Device Lett. 25, 205 (2004). 10.1109/LED.2004.825163
3. R. L. McCreery, Chem. Mater. 16, 4477 (2004). 10.1021/cm049517q
4. A. H. Flood, E. W. Wong, and J. F. Stoddart, Chem. Phys. 324, 280 (2006). 10.1016/j.chemphys.2005.12.031
5. R. L. McCreery and A. J. Bergren, Adv. Mater. 21, 4303 (2009). 10.1002/adma.200802850
6. D. Vuillaume, Proc. IEEE 98, 2111 (2010). 10.1109/JPROC.2010.2063410
7. Z. Liu, A. A. Yasseri, J. S. Lindsey, and D. F. Bocian, Science 302, 1543 (2003). 10.1126/science.1090677
8. Q. L. Li, S. Surthi, G. Mathur, S. Gowda, Q. Zhao, T. A. Sorenson, R. C. Tenent, K. Muthukumaran, J. S. Lindsey, and V. Misra, Appl. Phys. Lett. 85, 1829 (2004). 10.1063/1.1782254
9. K. M. Roth, A. A. Yasseri, Z. Liu, R. B. Dabke, V. Malinovskii, K. Schweikart, L. Yu, H. Tiznado, F. Zaera, J. S. Lindsey, W. G. Kuhr, and D. F. Bocian, J. Am. Chem. Soc. 125, 505 (2003). 10.1021/ja021169a
10. S. Gowda, G. Mathur, Q. Li, S. Surthi, and V. Misra, IEEE Trans. Nanotechnol. 5, 258 (2006). 10.1109/TNANO.2006.874046
11. J. R. Heath, Annu. Rev. Mater. Res. 39, 1 (2009). 10.1146/annurev-matsci- 082908-145401
12. Z. Chen, B. Lee, S. Sarkar, S. Gowda, and V. Misra, Appl. Phys. Lett. 91, 173111 (2007). 10.1063/1.2800824
13. J. Shaw, Y. W. Zhong, K. J. Hughes, T. H. Hou, H. Raza, S. Rajwade, J. Bellfy, J. R. Engstrom, H. D. Abruna, and E. C. Kan, IEEE Trans. Electron Devices 58, 826 (2011). 10.1109/TED.2010.2097266
14. J. Shaw, Q. Xu, S. Rajwade, T. Hou, and E. C. Kan, IEEE Trans. Electron Devices 59, 1189 (2012). 10.1109/TED.2012.2184797
15. G. Mathur, S. Gowda, Q. Li, S. Surthi, Q. Zhao, and V. Misra, IEEE Trans. Nanotechnol. 4, 278 (2005). 10.1109/TNANO.2004.842056
16. Q. L. Li, S. Surthi, G. Mathur, S. Gowda, V. Misra, T. A. Sorenson, R. C. Tenent, W. G. Kuhr, S. I. Tamaru, J. S. Lindsey, Z. M. Liu, and D. F. Bocian, Appl. Phys. Lett. 83, 198 (2003). 10.1063/1.1584088
17. M. J. Preiner and N. A. Melosh, Appl. Phys. Lett. 92, 213301 (2008). 10.1063/1.2917870
18. Y. Wang, W. Hwang, G. Zhang, G. Samudra, Y. Yeo, and W. Yoo, IEEE Trans. Electron Devices 54, 2699 (2007). 10.1109/TED.2007.904396
19. B. Govoreanu, P. Blomme, J. V. Houdt, and K. D. Meyer, Jpn. J. Appl. Phys., Part 1 42, 2020 (2003). 10.1143/JJAP.42.2020
20. L. Liu, J. P. Xu, F. Ji, J. X. Chen, and P. T. Lai, Appl. Phys. Lett. 101, 033501 (2012). 10.1063/1.4737158
21. X. Zhu, Q. Li, D. Ioannou, D. Gu, J. E. Bonevich, H. Baumgart, J. S. Suehle, and C. A. Richter, Nanotechnology 22, 254020 (2011). 10.1088/0957-4484/22/25/254020