Synthesis and electrical characteristics of Al/(p)PbS Schottky barrier junction

Materials Science in Semiconductor Processing

Volumn 16, Issue 6, 2013, Pages 1918-1924

  Hussain, Amir ^a   Rahman, Atowar ^a  

^a GAUHATI UNIVERSITY   (India)

Author keywords

Nanostructured; SEM; Semiconductor; TEM; X ray diffraction

Indexed keywords

CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE PLOTS; CHEMICAL BATH DEPOSITION METHODS; ELECTRICAL CHARACTERISTIC; INDIUM TIN OXIDE SUBSTRATES; JUNCTION PARAMETERS; NANO-STRUCTURED; TEMPERATURE DEPENDENT;

DEPOSITION; ELECTRIC RESISTANCE; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR JUNCTIONS;

EID: 84882253391     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.07.027     Document Type: Article

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