N-type transition metal oxide as a hole extraction layer in PbS quantum dot solar cells

Nano Letters

Volumn 11, Issue 8, 2011, Pages 3263-3266

  Gao, Jianbo ^a,b   Perkins, Craig L ^a   Luther, Joseph M ^a   Hanna, Mark C ^a   Chen, Hsiang Yu ^a   Semonin, Octavi E ^a,c   Nozik, Arthur J ^a,c   Ellingson, Randy J ^b   Beard, Matthew C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

band bending; gap states; hole extraction layer; quantum dot; solar cell; Transition metal oxide

Indexed keywords

BACK CONTACT; BANDBENDING; EFFICIENCY IMPROVEMENT; GAP STATE; HOLE EXTRACTION LAYER; METAL ANODES; QUANTUM DOT SOLAR CELLS; TRANSITION METAL OXIDE; TRANSITION-METAL OXIDES; VANADIUM OXIDES; ZNO;

GOLD; HETEROJUNCTIONS; MOLYBDENUM; NANOSTRUCTURED MATERIALS; QUANTUM CHEMISTRY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSITION METAL COMPOUNDS; TRANSITION METALS; VANADIUM; VANADIUM COMPOUNDS;

MOLYBDENUM OXIDE;

EID: 80051651752     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2015729     Document Type: Article

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