Barriers and facilitators to self-care in chronic heart failure: A meta-synthesis of qualitative studies

SpringerPlus

Volumn 2, Issue 1, 2013, Pages

  Siabani, Soraya ^a,b   Leeder, Stephen R ^a   Davidson, Patricia M ^c  

^a UNIVERSITY OF SYDNEY   (Australia)

^b KERMANSHAH UNIVERSITY OF MEDICAL SCIENCES   (Iran)

^c UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

CHF; Compliance; Congestive heart failure; Qualitative review; Self management; Selfcare determinants; Treatment adherence

Indexed keywords

EID: 84881219822     PISSN: None     EISSN: 21931801     Source Type: Journal    
DOI: 10.1186/2193-1801-2-320     Document Type: Article

References (27)

1. Chen Y, Bagnall D, Yao T: ZnO as a novel photonic material for the UV region. Mater Sci Eng B 2000, 75:190-198.
2. Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P: Room-temperature ultraviolet nanowire nanolasers. Science 2001, 292:1897-1899.
3. Park WI, Jun YH, Jung SW, Yi GC: Excitonic emissions observed in ZnO single crystal nanorods. Appl Phys Lett 2003, 82:964-966.
4. Özgür Ü, Alivov YI, Liu C, Teke A, Reshchikov MA, Doan S, Avrutin V, Cho SJ, Morkoç H: A comprehensive review of ZnO materials and devices. J Appl Phys 2005, 98:041301.
5. Wang G, Chu S, Zhan N, Lin Y, Chernyak L, Liu J: ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection. Appl Phys Lett 2011, 98:041107.
6. Chen MT, Lu MP, Wu YJ, Song J, Lee CY, Lu MY, Chang YC, Chou LJ, Wang ZL, Chen LJ: Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays. Nano Lett 2010, 10:4387-4393.
7. Sun XW, Ling B, Zhao JL, Tan ST, Yang Y, Shen YQ, Dong ZL, Li XC: Ultraviolet emission from a ZnO rod homojunction light-emitting diode. Appl Phys Lett 2009, 95:133124.
8. Chang SP, Chuang RW, Chang SJ, Chiou YZ, Lu CY: MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode. Thin Solid Films 2009, 517:5054-5056.
9. Li S, Ware M, Wu J, Minor P, Wang Z, Wu Z, Jiang Y, Salamo GJ: Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN. Appl Phys Lett 2012, 101:122103.
10. Li S, Ware ME, Wu J, Kunets VP, Hawkridge M, Minor P, Wang Z, Wu Z, Jiang Y, Salamo GJ: Polarization doping: Reservoir effects of the substrate in AlGaN graded layers. J Appl Phys 2012, 112:053711.
11. 3 buffer layers. Appl Phys Lett 2012, 100:011901.
12. Shih YT, Wu MK, Chen MJ, Cheng YC, Yang JR, Shiojiri M: ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition. Appl Phys B 2010, 98:767-772.
13. Lim JH, Kang CK, Kim KK, Park IK, Hwang DK, Park SJ: UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering. Adv Mater 2006, 18:2720-2724.
14. Liu W, Gu SL, Ye JD, Zhu SM, Liu SM, Zhou X, Zhang R, Shi Y, Zheng YD, Hang Y, Zhang CL: Blue-yellow ZnO homostructural light-emitting diode realized by metal organic chemical vapor deposition technique. Appl Phys Lett 2006, 88:092101.
15. Du GT, Liu WF, Bian JM, Hu LZ, Liang HW, Wang XS, Liu AM, Yang TP: Room temperature defect related electroluminescence from ZnO homojunctions grown by ultrasonic spray pyrolysis. Appl Phys Lett 2006, 89:052113.
16. Bian J, Liu W, Sun J, Liang H: Synthesis and defect-related emission of ZnO based light emitting device with homo-and heterostructure. J Mater Process Technol 2007, 184:451-454.
17. Børseth TM, Svensson BG, Kuznetsov AY, Klason P, Zhao QX, Willander M: Identification of oxygen and zinc vacancy optical signals in ZnO. Appl Phys Lett 2006, 89:262112.
18. 2 ultra-thin film as the hole buffer layer. Thin Solid Films 2009, 517:4926-4929.
19. Yang LY, Chen XZ, Xu H, Ye DQ, Tian H: Surface modification of indium tin oxide anode with self-assembled monolayer modified Ag film for improved OLED device characteristics. Appl Surf Sci 2008, 254:5055-5060.
20. Guo TF, Wen TC, Huang YS, Lin MW, Tsou CC, Chung CT: White-emissive tandem-type hybrid organic/polymer diodes with (0.33, 0.33) chromaticity coordinates. Opt Express 2009, 17:21205-21215.
21. Kim JH, Lee YJ, Jang YS, Jang JN, Kim DH, Song BC, Lee DH, Kwon SN, Hong MP: The effect of Ar plasma bombardment upon physical property of tungsten oxide thin film in inverted top-emitting organic light-emitting diodes. Org Electron 2011, 12:285-290.
22. Chan IM, Hsu TY: Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode. Appl Phys Lett 2002, 81:1899-1901.
23. Wang JY, Lee CY, Chen YT, Chen CT, Chen YL: Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions. Appl Phys Lett 2009, 95:131117.
24. Alvi NH, Hussain S, Jensen J, Nur O, Willander M: Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes. Nano Res Lett 2011, 6:628.
25. Sadaf JR, Israr MQ, Kishwar S, Nur O, Willander M: White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode. Nano Res Lett 2010, 5:957-960.
26. Nalage SR, Chougule MA, Sen S, Joshi PB, Patil VB: Sol-gel synthesis of nickel oxide thin films and their characterization. Thin Solid Films 2012, 520:4835-4840.
27. Aranovich JA, Golmayo DG, Fahrenbruch AL, Bube RH: Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis. J Appl Phys 1980, 51:4260-4268.