SiGe quantum dots over Si pillars for visible to near-infrared broadband photodetection

IEEE Photonics Technology Letters

Volumn 25, Issue 15, 2013, Pages 1520-1523

  Lai, Wei Ting ^a   Liao, Po Hsiang ^a   Homyk, Andrew P ^b   Scherer, Axel ^b   Li, Pei Wen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Broadband photodetector; Selective deposition; Si nanopillar; SiGe quantum dot

Indexed keywords

APPLIED VOLTAGES; BUILT-IN ELECTRIC FIELDS; CARRIER RECOMBINATION; INDIUM TIN OXIDE; NANOPILLAR; SELECTIVE DEPOSITION; SELECTIVE GROWTH; SIGE QUANTUM DOT;

CHEMICAL VAPOR DEPOSITION; GERMANIUM; INFRARED DEVICES; NANOSTRUCTURES; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTOR QUANTUM DOTS; SILICON; TIN OXIDES;

SILICON ALLOYS;

EID: 84880855327     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2013.2270281     Document Type: Article

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