Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 667-669

  Monte, A F G ^a   Finley, J J ^a   Whittaker, D M ^a   Itskevitch, I ^b   Mowbray, D J ^a   Skolnick, M S ^a   Sales, F V ^c   Hopkins, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF HULL   (United Kingdom)

^c UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

Photocurrent; Photoluminescence; Quantum dots

Indexed keywords

COMPUTER SIMULATION; HOLE MOBILITY; NONLINEAR SYSTEMS; PHOTOCURRENTS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CHARGE ACCUMULATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037905368     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00092-2     Document Type: Conference Paper

References (4)

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3. Kapteyn C.M.A., Heinrichsdorff F., Stier O., Reitz R., Grundmann M., Zakharov N.D., Bimberg D., Werner P. Electron escape from InAs quantum dots. Physical Review B. 60:(20):1999;14265.
4. Halt D., Warburton R.J., Karrai K., Huant S., Medeiros-Ribeiro G., Garcia J.M., Schoenfeld W., Petroff P.M. Luminescence quenching in InAs quantum dots. Applied Physics Letters. 78:(19):2001;2946.