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Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

Nonlinear effects of the photocurrent in self-assembled InAs/GaAs quantum dots

(2) Monte, A F G a Qu, Fanyao b

a FEDERAL UNIVERSITY OF UBERLÂNDIA (Brazil)

b UNIVERSITY OF BRASILIA (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSPORT; ESCAPE DYNAMICS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; MULTI-LAYERED; NON-LINEARITY; NONLINEAR DEPENDENCE; NONLINEAR EFFECT; PHOTOLUMINESCENCE INVESTIGATION; POTENTIAL APPLICATIONS; SELF ASSEMBLED QUANTUM DOTS; SELF-ASSEMBLED; THEORETICAL PREDICTION; VERTICAL ELECTRIC FIELDS;

ELECTRIC FIELDS; LASER EXCITATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79953008288 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3562192 Document Type: Article

Times cited : (6)

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