Nanocrystal-based Ohmic contacts on n and p-type germanium

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Pavan Kishore, V ^a   Paramahans, Prashanth ^a   Sadana, Sunny ^a   Ganguly, Udayan ^a   Lodha, Saurabh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOCRYSTALS; BARRIER HEIGHTS; DEVICE SIMULATIONS; FERMI LEVEL PINNING; OHMIC CHARACTERISTICS; P-TYPE; P-TYPE CONTACT; QUASI-OHMIC; RECTIFYING CHARACTERISTICS; SIMPLE METHOD; THIN DIELECTRIC LAYER; TUNNELING RESISTANCE; WORK-FUNCTION DIFFERENCE; ZERO-BIAS RESISTANCE;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTORS; ELECTRIC FIELDS; NANOCRYSTALS; OHMIC CONTACTS;

GERMANIUM;

EID: 84859797186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3700965     Document Type: Article

References (14)

1. Y. Sasago, M. Kinoshita, T. Morikawa, K. Kurotsuchi, S. Hanzawa, T. Mine, A. Shima, Y. Fujisaki, H. Kume, N. T. H. Moriya, and K. Torii, Proc. Symp. VLSI Tech. 2009, 24-25
2. A. Dimoulas, P. Tsipas, and A. Sotiropoulos, Appl. Phys. Lett. 89, 252110 (2006). 10.1063/1.2410241
3. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007). 10.1063/1.2789701
4. E. Simoen and J. Vanhellemont, J. Appl. Phys. 106, 103516 (2009). 10.1063/1.3261838
5. Y. Zhou, M. Ogawa, X. Han, and K. L. Wang, Appl. Phys. Lett. 93, 202105 (2008). 10.1063/1.3028343
6. M. Kobayashi, A. Kinoshita, K. Saraswat, H. S. P. Wong, and Y. Nishi, J. Appl. Phys. 105, 023702 (2009). 10.1063/1.3065990
7. J. Y. Jason Lin, A. M. Roy, A. Nainani, Y. Sun, and K. C. Saraswat, Appl. Phys. Lett. 98, 092113 (2011). 10.1063/1.3562305
8. V. Narayanan, Z. Liu, Y. N. Shen, M. Kim, and E. C. Kan, IEDM 2000, 87-90. 10.1109/IEDM.2000.904265
9. TCAD SDEVICE Manual (2007) Release: Z-2007.03, Synopsys, Zurich, Switzerland
10. H. Adhikari, A. F. Marshall, I. A. Goldthorpe, C. E. D. Chidsey, and P. C. McIntyre, ACS Nano 1 (5), 415 (2007). 10.1021/nn7001486
11. A. Molle, Md. N. K. Bhuiyan, G. Tallarida, and M. Fanciulli, Appl. Phys. Lett. 89, 083504 (2007). 10.1063/1.2337543
12. N. E. Posthuma, J. van der Heide, G. Flamand, and J. Poortmans, IEEE Trans. Electron Devices 54, 1210 (2007). 10.1109/TED.2007.894610
13. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (John Wiley Sons, 1981)
14. L. A. Porter, H. C. Choi, A. E. Ribbe, and J. M. Buriak, Nano Lett. 2, 1067-1071 (2002). 10.1021/nl025677u