Solution-processed lif-doped ZnO films for high performance low temperature field effect transistors and inverted solar cells

ACS Applied Materials and Interfaces

Volumn 5, Issue 14, 2013, Pages 6687-6693

  Chang, Jingjing ^a   Lin, Zhenhua ^a   Zhu, Chunxiang ^a   Chi, Chunyan ^a   Zhang, Jie ^b   Wu, Jishan ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

field effect transistors; inverted solar cells; LiF; low temperature; ZnO

Indexed keywords

BULK HETEROJUNCTION SOLAR CELLS; INVERTED SOLAR CELLS; LIF; LOW TEMPERATURES; METAL OXIDE THIN-FILM TRANSISTORS; POWER CONVERSION EFFICIENCIES; TRANSISTOR OPERATION; ZNO;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; SEMICONDUCTOR DOPING; SOLAR CELLS; TEMPERATURE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84880793622     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am4014488     Document Type: Article

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