High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

Applied Physics Letters

Volumn 103, Issue 2, 2013, Pages

  Shi, Zhifeng ^a   Zhang, Yuantao ^a   Zhang, Jinxiang ^a   Wang, Hui ^a   Wu, Bin ^a   Cai, Xupu ^a   Cui, Xijun ^a   Dong, Xin ^a   Liang, Hongwei ^b   Zhang, Baolin ^a   Du, Guotong ^a,b  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; GOOD STABILITY; LIGHT OUTPUT POWER; NANOWALL NETWORKS; SPECTRAL LINE; TEMPERATURE DEPENDENT; TEMPERATURE SENSITIVITY; VERTICALLY ALIGNED;

GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; ZINC OXIDE;

DIODES;

EID: 84880493725     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813538     Document Type: Article

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