Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 9, 2005, Pages 1869-1873

  Cho, Jaehee ^a,b   Sone, Cheolsoo ^a   Park, Yongjo ^a   Yoon, Euijoon ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-TO-BAND RECOMBINATION; GEOMETRY DEVICES; SELF-HEATING; TEMPERATURE MONITORING;

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; GEOMETRY; NITRIDES;

LIGHT EMITTING DIODES;

EID: 25444439014     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200520041     Document Type: Article

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