Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes

Optics Express

Volumn 19, Issue 27, 2011, Pages 26006-26010

  Ahn, Jaehui ^a   Park, Hyunik ^a   Mastro, Michael A ^b   Hite, Jennifer K ^b   Eddy Jr , Charles R ^b   Kim, Jihyun ^a  

^a Korea University   (South Korea)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTROLUMINESCENCE; ELECTROPHORESIS; ENERGY GAP; HETEROJUNCTIONS; LIGHT EMITTING DIODES; NANOSTRUCTURES; PHOTOLITHOGRAPHY; SEMICONDUCTOR DIODES; SILICON; SUBSTRATES; THIN FILMS;

HETEROJUNCTION DIODES; MULTI-COLOR EMISSIONS; PATTERNED SUBSTRATES; PEAK-TO-PEAK VOLTAGES; PHOTOLITHOGRAPHIC PROCESS; PRECISE POSITIONING; SILICON HETEROJUNCTIONS; ZNO NANOSTRUCTURES;

ZINC OXIDE;

NANOMATERIAL; ZINC OXIDE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHTING; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; ZINC OXIDE;

EID: 84555197295     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.026006     Document Type: Article

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